Product Summary

The MRF141G is an RF power FET.

Parametrics

MRF141G absolute maximum ratings: (1)drain-source voltage: 65V; (2)drain-gate voltage: 65V; (3)gate-source voltage: ±40V; (4)drain current: 32A; (5)storage temperature: -65 to 150℃; (6)operating junction temperature: 200℃.

Features

MRF141G features: (1)Guaranteed performance at 175MHz, 28V: Output power: 300W ;Gain: 12dB (14dB Typ.) ;Efficiency: 50% ; (2)Low thermal resistance: 0.35°C/W ; (3)Ruggedness tested at rated output power ; (4)Nitride passivated die for enhanced reliability.

Diagrams

MRF141G block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF141G
MRF141G
M/A-COM Technology Solutions
Transistors RF MOSFET Power 5-175MHz 300Watts 28Volt Gain 12dB
Data Sheet
0-1: $113.36
1-10: $109.58
10-25: $105.80
25-50: $102.03
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF1.6/5.6
MRF1.6/5.6
Other

Data Sheet
Negotiable 
MRF1.6/5.6-AP-2.5C
MRF1.6/5.6-AP-2.5C
Hirose Connector
RF Connectors Obsolete
Data Sheet
Negotiable 
MRF1.6/5.6-AP-59U
MRF1.6/5.6-AP-59U
Hirose Connector
RF Connectors Obsolete
Data Sheet
Negotiable 
MRF1.6/5.6-BCUPA
MRF1.6/5.6-BCUPA
Hirose Connector
RF Connectors Obsolete
Data Sheet
Negotiable 
MRF1.6/5.6-LPJ-179U
MRF1.6/5.6-LPJ-179U
Hirose Connector
RF Connectors Obsolete
Data Sheet
Negotiable 
MRF1.6/5.6-LR-PC-1
MRF1.6/5.6-LR-PC-1
Hirose Connector
RF Connectors Obsolete
Data Sheet
Negotiable