Product Summary

The W27C512-45Z is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65536 ′ 8 bits that operates on a single 5 volt power supply. The W27C512 provides an electrical chip erase function. Like conventional UVEPROMs, the W27C512 has twocontrol functions, both of which produce data at the outputs. CE is for power control and chip select. OE/VPP controls the output buffer to gate data to the output pins. When addresses are stable, the address access time (TACC) is equal to the delay from CE to output (TCE), and data are available at the outputs TOE after the falling edge of OE/VPP, if TACC and TCE timings are met.

Parametrics

W27C512-45Z absolute maximum ratings: (1)Operation Temperature: 0 to +70 °C; (2)Storage Temperature : -65 to +125 °C; (3)Voltage on all Pins with Respect to Ground Except OE/VPP, A9 and VCC Pins :-0.5 to VCC +0.5 V; (4)Voltage on OE/VPP Pin with Respect to Ground :-0.5 to +14.5 V; (5)Voltage on A9 Pin with Respect to Ground : -0.5 to +14.5 V; (6)Voltage VCC Pin with Respect to Ground : -0.5 to +7 V.

Features

W27C512-45Z features: (1)High speed access time: 45/70/90/120 nS (max.) ; (2)Read operating current: 30 mA (max.) ; (3)Erase/Programming operating current 30 mA (max.) ; (4)Standby current: 1 mA (max.) ; (5)Single 5V power supply ; (6)+14V erase/+12V programming voltage ; (7)Fully static operation ; (8)All inputs and outputs directly TTL/CMOS compatible ; (9)Three-state outputs ; (10)Available packages: 28-pin 600 mil DIP, 330 mil 32-pin PLCC.

Diagrams

W27C512-45Z block diagram

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W27C512-45Z
W27C512-45Z


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