Product Summary

The SI4565DY-T1-E3 is a P-channel 40V MOSFET. Its applications include CCFL inverter.

Parametrics

SI4565DY-T1-E3 absolute maximum ratings: (1)drain-source voltage: -40V; (2)gate-source voltage: 16V; (3)continuous drain current: -3.3A; (4)pulsed drain current: 30A; (5)maximum power dissipation: 1.1W; (6)operating junction and storage temperature range: -55 to 150℃.

Features

SI4565DY-T1-E3 features: (1)TrenchFET Power MOSFET; (2)100% Rg Tested; (3)UIS Tested.

Diagrams

SI4565DY-T1-E3 block diagram

Si4500BDY
Si4500BDY
Other

Data Sheet
Negotiable 
SI4500BDY-T1
SI4500BDY-T1
Vishay/Siliconix
MOSFET 20V 9.1/5.3A 1.3W
Data Sheet
Negotiable 
SI4500BDY-T1-E3
SI4500BDY-T1-E3
Vishay/Siliconix
MOSFET 20V 7/4.5A 2.5W
Data Sheet
0-1: $0.71
1-25: $0.56
25-50: $0.52
50-100: $0.50
SI4500BDY-T1-GE3
SI4500BDY-T1-GE3
Vishay/Siliconix
MOSFET 20V 9.1/5.3A 2.5W 20/60mohm @ 4.5V
Data Sheet
0-1330: $0.38
1330-2500: $0.34
2500-5000: $0.30
5000-7500: $0.29
SI4500DY
SI4500DY
Vishay/Siliconix
MOSFET 20V 7/4.5A 2.5W
Data Sheet
Negotiable 
SI4500DY-E3
SI4500DY-E3
Vishay/Siliconix
MOSFET 20V 7/4.5A 2.5W
Data Sheet
Negotiable