Product Summary

The SD2933 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V DC large signal applications up to 150MHz

Parametrics

SD2933 absolute maximum ratings: (1)Drain Source Volatage :125 V; (2)Drain-Gate Voltage (RGS =1MΩ) :125 V; (3)Gate-Source Voltage: ±20 V; (4)Drain Current: 40 A; (5)Power Dissipation :648 W; (6)Max. Operating Junction Temperature :200°C; (7)Storage Temperature :-65 to 150°C.

Features

SD2933 features: (1)gold metallization; (2)excellent thermal stability; (3)common source configuration; (4)P OUT= 300 W min. with 20 dB gain @ 30MHz; (5)thermally enhanced packaging.

Diagrams

SD2933 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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Quantity
SD2933
SD2933

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