(Hong Kong)
Product Summary
The KSC5042F is an NPN Triple Diffused Planar Silicon Transistor.
Parametrics
KSC5042F absolute maximum ratings: (1)VCBO Collector-Base Voltage: 1500 V; (2)VCEO Collector-Emitter Voltage: 900 V; (3)VEBO Emitter-Base Voltage: 5 V; (4)IC Collector Current (DC): 100 mA; (5)ICP Collector Current (Pulse): 300 mA; (6)PC Collector Dissipation (TC=25℃): 6 W; (7)TJ Junction Temperature: 150 ℃; (8)TSTG Storage Temperature: - 55 ~ 150 ℃.
Features
KSC5042F features: (1)High Collector-Emitter Breakdown Voltage : BVCEO=900V; (2)Small Cob =2.8pF (Typ.); (3)Wide S.O.A; (4)High reliability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 KSC5042FTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Triple Diffused Planar Silicon |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
 |
KSC5019 |
Other |
|
Data Sheet |
Negotiable |
|
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|
KSC5019MBU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
Data Sheet |
Negotiable |
|
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|
KSC5019MTA |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Transistor |
Data Sheet |
|
|
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|
KSC5019MTA_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Transistor |
Data Sheet |
Negotiable |
|
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|
KSC5019NTA |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN/10V/2A/Low(sat) |
Data Sheet |
Negotiable |
|
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|
KSC5020 |
Other |
|
Data Sheet |
Negotiable |
|
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