(Hong Kong)
Product Summary
The IRLU3410PBF is a power MOSFET. It utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Parametrics
IRLU3410PBF absolute maximum ratings: (1)continuous drain current: 17A; (2)pulsed drain current: 60A; (3)power dissipation: 79W; (4)linear derating factor: 0.53W/℃; (5)avalanche current: 9A; (6)single pulse avalancje energy: 150mJ; (7)operating junction and storage temperature range: -55 to 175℃.
Features
IRLU3410PBF features: (1)Logic Level Gate Drive; (2)Ultra Low On-Resistance; (3)Straight Lead (IRLU3410); (4)Advanced Process Technology; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Lead-Free.
Diagrams
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 IRLU3410PBF |
International Rectifier |
MOSFET MOSFT 100V 15A 105mOhm 22.7nC LogLv |
Data Sheet |
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IRLU3410PBF |
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MOSFET MOSFT 100V 15A 105mOhm 22.7nC LogLv |
Data Sheet |
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