Product Summary

The FDS6912A is a dual N-Channel, logic level, power Trench MOSFET. They are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parametrics

FDS6912A absolute maximum ratings: (1)drain-source voltage: 30V; (2)gate-source voltage: ±20V; (3)drain current: 6A; (4)power dissipation: 2W; (5)operating and storage temperature range: -55 to 150℃.

Features

FDS6912A features: (1)6 A, 30 V. RDS(ON)= 0.028Ω @ VGS = 10 V ;RDS(ON)= 0.035Ω @VGS = 4.5 V.; (2)Fast switching speed.; (3)Low gate charge (typical 9 nC).; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.

Diagrams

FDS6912A block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FDS6912A
FDS6912A

Fairchild Semiconductor

MOSFET SO-8 DUAL N-CH 30V

Data Sheet

Negotiable 
FDS6912A_Q
FDS6912A_Q

Fairchild Semiconductor

MOSFET Dual N-Channel 30V

Data Sheet

Negotiable