Product Summary

The BD681 is an NPN epitaxial silicon transistor. It can be used as output device in complementary general-purpose amplifier applications.

Parametrics

BD681 absolute maximum ratings: (1)Collector-Emitter Voltage Vceo :100Vdc; (2)Collector-Base Voltage Vcbo :100Vde; (3)Emitter-Base Voltage Vebo : 5.0Vdc; (4)Collector Current Ic : 4.0Adc; (5)Base Current Ib:1.0 Adc; (6)Total Device Dissination @Tc=25°C Derate above 25°C,Pd:40W,0.32W/°C; (7)Operating and Storage Junction Temperature Range : Tj,Tstg:-55 to +150°C.

Features

BD681 features: (1)High DC Current Gain:hFE= 750 (Min) @ IC= 1.5 and 2.0 Adc; (2)Monolithic Construction; (3)BD681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682; (4)Pb-Free Packages are Available.

Diagrams

BD681 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BD681
BD681
STMicroelectronics
Transistors Darlington NPN Power Darlington
Data Sheet
0-1: $0.90
1-10: $0.76
10-100: $0.66
100-250: $0.58
BD681G
BD681G
ON Semiconductor
Transistors Darlington 4A 100V Bipolar Power NPN
Data Sheet
0-1: $0.33
1-25: $0.25
25-100: $0.22
100-500: $0.19
BD681S
BD681S
Fairchild Semiconductor
Transistors Darlington NPN Epitaxial Sil
Data Sheet
0-1: $0.35
1-25: $0.26
25-100: $0.22
100-250: $0.19
BD681STU
BD681STU
Fairchild Semiconductor
Transistors Darlington NPN Epitaxial Sil
Data Sheet
0-1: $0.30
1-25: $0.25
25-100: $0.22
100-250: $0.19